Products

DFB High Power Analog Laser Device


Description

Ø  1260~1620nm direct modulation with DFB-LD as Transmitter

Ø  Low noise, Low distortion Low threshold current

Ø  Built-in InGaAs/PIN monitor

Ø  High reliability,Long operation life






Specification

Parameter

Symbol

Ratings

Unit

Notes

Reverse   VoltageLD

Vr(LD)

2

V

CW

Forward   CurrentLD

If(LD)

100

mA

CW

Reverse   VoltageMPD

Vr(PD)

15

V

CW

Forward   CurrentMPD

If(PD)

2

mA

CW

Storage   Temperature

Tstg

-40~ +85

-

Operating   Temperature

Topr

-20~ +70


Lead   Soldering Temperature/Time

Ts

260/10

/S

-

Fiber   Yield Strength

-

1

kgf

-

Fiber   Bend Radius

-

60

mm

-


Transmitter Optical and Electrical Characteristics (Tc=25℃)

Parameter

Symbol

Min

Type

Max

Unit

Test   Condition

Threshold Current

Ith

3

-

15

mA

CW

-

-

50

mA

CW,T=85

Operating Voltage

Vf

-

1.1

1.5

V

-

Forward Current

If

55

-

65

mA

CW, Po=10mW

Center Wavelength

λc

-10

Central Wavelength

+10

nm

CW, Po= Pf

Rise/Fall Time(20-80%)

Tr/Tf

-

0.2

0.5

nS

If=Ith, Po=Pf, 50 Ohm

Monitor Current

Im

100

-

1000

uA

CW, If=Ith+20mA

Capacitance

C

-

10

15

PF

VRD=5V, f=1MHz

Dark Current

Id

-

-

100

nA

VRD=5V

Spectral Width(-3dB)

Δλ

-

0.3

0.5

nm

CW, If=Ith+20mA

Slope Efficiency

SE

0.18

-

-

W/A

CW, If=Ith+20mA

Tracking Error

TE

-1.5

-

1.5

dB

CW, If=Ith+20mA

Bandwidth

BW

2

2.5

-

GHz


Side Mode

Suppression Ratio

SMSR

30

-

-

dB

CW, Po=10mW

Optical Isolation

ISO

30

-

-

dB

--

Relative Intensity Noise

RIN

-

-

-130

dB/Hz

-